SFH690ABT/ at/ bt/ ct document number 83686 rev. 1.5, 20-apr-04 vishay semiconductors www.vishay.com 1 i179065 1 2 4 3 e c a c pb p b -free e3 optocoupler, phototransistor ou tput, sop-4, mini-flat package features ? sop (small outline package) isolation test voltage, 3750 v rms (1.0 s) high collector-emitter breakdown voltage, v ceo = 70 v low saturation voltage fast switching times temperature stable low coupling capacitance end-stackable, .100 " (2.54 mm) spacing lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code u csa 93751 bsi iec60950 iec60065 applications high density mounting or space sensitive pcbs plcs telecommunication description the SFH690ABT/ at/ bt/ ct family has a gaas infrared emitting diode emitter, which is optically cou- pled to a silicon planar p hototransistor detector, and is incorporated in a 4-pin 100 mil lead pitch miniflat package. it features a high current transfer ratio, low coupling capacitance, and high isolation voltage. the coupling devices are designed for signal trans- mission between two electrically separated circuits. the sfh690 series is available only on tape and reel. there are 2000 parts per reel. marking for sfh690at is sfh690a; sfh690bt is sfh690b; sfh690ct is sfh690c; SFH690ABT will be marked as sfh690a or sfh690b. order information for additional information on the available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of thos e given in the operational sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input part remarks SFH690ABT ctr 50 - 300 %, smd-4 sfh690at ctr 50 - 150 %, smd-4 sfh690bt ctr 100 - 300 %, smd-4 sfh690ct ctr 100 - 200 %, smd-4 parameter test condition symbol value unit reverse voltage v r 6.0 v dc forward current i f 50 ma surge forward current t p 10 si fsm 2.5 a power dissipation p diss 80 mw
www.vishay.com 2 document number 83686 rev. 1.5, 20-apr-04 SFH690ABT/ at/ bt/ ct vishay semiconductors output coupler parameter test condition symbol value unit collector-emitter voltage v ce 70 v emitter-collector voltage v ec 7.0 v collector current i c 50 ma t p 1.0 ms i c 100 ma power dissipation p diss 150 mw parameter test condition symbol value unit isolation test voltage between emitter and detector (1.0 s) v iso 3750 v rms creepage 5.33 mm clearance 5.08 mm insulation thickness between emitter and detector 0.4 mm comparative tracking index per din iec 112/vdeo 0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature max. 10 s dip soldering distance to seating plane 1.5 mm t sld 260 c figure 1. permissible power diss ipation vs. ambient temperature 0 50 100 150 200 0 25 50 75 100 125 150 18484 p Cpower dissipation (mw) tot phototransistor diode t amb C ambient temperature ( q c )
SFH690ABT/ at/ bt/ ct document number 83686 rev. 1.5, 20-apr-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler current transfer ratio parameter test condition symbol min ty p. max unit forward voltage i f = 5 ma v f 1.15 1.4 v reverse current v r = 6.0 v i r 0.01 10 a capacitance v r = 0.0 v, f = 1.0 mhz c o 14 pf thermal resistance r thja 750 k/w parameter test condition symbol min ty p. max unit collector-emitter leakage current v ce = 20 v i ceo 100 na collector-emitter capacitance v ce = 5.0 v, f = 1.0 mhz c ce 2.8 pf thermal resistance r thja 500 k/w parameter test condition symbol min ty p. max unit collector-emitter saturation voltage i f = 10 ma, i c = 2.0 ma v cesat 0.1 0.3 v coupling capacitance f = 1.0 mhz c c 0.3 pf parameter te s t c o n d i t i o n part symbol min ty p. max unit i c /i f i f = 5.0 ma, v ce = 5.0 v sfh690at ctr 50 150 % sfh690bt ctr 100 300 % sfh690ct ctr 100 200 % SFH690ABT ctr 50 300 %
www.vishay.com 4 document number 83686 rev. 1.5, 20-apr-04 SFH690ABT/ at/ bt/ ct vishay semiconductors switching characteristics typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit rise time i c = 2.0 ma, v cc = 5.0 v, r l = 100 ? t r 3.0 s fall time i c = 2.0 ma, v cc = 5.0 v, r l = 100 ? t f 4.0 s turn-on time i c = 2.0 ma, v cc = 5.0 v, r l = 100 ? t on 5.0 s turn-off time i c = 2.0 ma, v cc = 5.0 v, r l = 100 ? t off 3.0 s figure 2. switching operation (without saturation) figure 3. diode forward voltage vs. forward current isfh690at_01 r l =100 ? v cc =5v 50 ? i f isfh690at_02 forward voltage, v f (v) forward current, i f (ma) 0.01 0.10 1.00 10.00 100.00 1.6 1.4 1.1 0.9 0.6 t=C55c t=100c t=75c t=50c t=25c t=C25c t=0c figure 4.colletorcurrents.colletormittervoltage figure 5.colletortomitte rarcurrents.amient temerature isfh690at_03 80 70 60 50 40 30 20 10 0 0246810 collector to emitter voltage, v ce (v) i f =30ma collector current, i c (ma) i f =20ma i f =15ma i f =5ma i f =10ma isfh690at_04 1000.0 100.0 10.0 1.0 C60 C40 C20 0 20 40 60 80 100 12 v 24 v 40 v collector-emitter dark current, i ceo (na) ambient temperature, t a (c)
SFH690ABT/ at/ bt/ ct document number 83686 rev. 1.5, 20-apr-04 vishay semiconductors www.vishay.com 5 figure 6. collector current vs. collector-emitter saturation voltage figure 7. normalized output current vs. ambient temperature figure 8. normalized output current vs. ambient temperature isfh690at_05 collector current (ma) collector-emitter saturation voltage, v ce (sat) (v) 100.000 10.000 1.000 0.100 0.010 0.001 0.0 0.2 0.4 0.6 0.8 1.0 i f =25ma i f =10ma i f = 5.0 ma i f = 2.0 ma i f = 1.0 ma isfh690at_06 normalized output current, ctr 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 ambient temperature, t a (c) C60 C40 C20 0 20 40 60 80 100 normalized to 1.0 at t a =25c i f = 1.0 ma, v ce = 5.0 v isfh690at_07 1.2 1.0 0.8 0.6 0.4 0.2 0.0 normalized output current, ctr ambient temperature, t a (c) C60 C40 C20 0 20 40 60 80 100 normalized to 1.0 at t a =25c i f = 5.0 ma, v ce = 5.0 v figure 9.currenttransferratios.forwardcurrent figure 10.switchingtimes.loadresistance figure 11.switchingtimes.loadresistance isfh690at_08 current transfer ratio, ctr (%) forward current, if (ma) 300 250 200 150 100 50 0 0.1 1.0 10.0 50 100.0 v ce =5.0 v typical for ctr=250% typical for ctr=150% isfh690at_09 switching time ( s) load resistance, r l ( ? ) 100.0 10.0 1.0 0.1 0 500 1000 1500 2000 t on t off t d t s v cc = 5.0 v i c =2.0ma isfh690at_10 switching time, ( s) load resistance, r l ( ? ) 1000 100 10 1 0 100 1000 10000 100000 i f = 5.0 ma v cc = 5.0 v ctr = 150% t r t d t s t f
www.vishay.com 6 document number 83686 rev. 1.5, 20-apr-04 SFH690ABT/ at/ bt/ ct vishay semiconductors package dimensions in inches (mm) i178037 0.190 (4.83) 0.170 (4.32) 0.184 (4.67) 0.164 (4.17) 0.024 (0.61) 0.034 (0.86) 1 4 2 3 0.018 (0.46) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41) leads coplanarity 0.004 (0.10) max. 0.018 (0.46) 0.013 (0.33) 0.025 (0.63) 0.015 (0.38) 0.220 (5.59) 0.200 (5.08) 40 10 0.008 (0.20) 0.004 (0.10) 0.284 (7.21) 0.264 (6.71) pin one i.d. (on chamfer side of package) 0.080 (2.03) 0.075 (1.91) 6 iso me tho d a r .010 (.25) .036 (.91) .014 (.36) .200 (5.08) .045 (1.14) .290 (7.37) .100 (2.54)
SFH690ABT/ at/ bt/ ct document number 83686 rev. 1.5, 20-apr-04 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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